preliminary designer's data sheet solid state devices, inc. sft4959 features: 30ma 18 volts pnp transistor data sheet #: TR0001a maximum ratings symbol units value v ebo 3 volts emitter-base voltage v cbo 25 volts collector-base voltage i c 30 collector current collector-emitter voltage v ceo 18 ma volts o c operating and storage temperature t j, t stg -65 to +200 .2 1.14 w mw/ o c o c/mw thermal resistance, junction to case r 2 jc .87 total device dissipation @ tc=100 o c derate above 100 o c p d ? pnp silicon annular transistor ? high speed ? high frequency ? low noise to-72 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release.
solid state devices, inc. sft4959 electrical characteristics * symbol 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 v units min max 25 v - 3 bv ebo v - emitter-base breakdown voltage (i e =0.1madc) - i cbo ua 0.1 collector cutoff current (v cb =10vdc) 20 h fe 200 forward current transfer ratio (i c =2ma, v ce =10vdc) 1000 - -pf 0.8 collector-base capacitance (v cb =10 vdc , i e =0 , f =1 mhz ) cob current gain bandwidth product (i c =10ma, v ce =10vdc , f =100 mhz) ft bv cbo collector-base breakdown voltage (i c =0.1madc) collector-emitter breakdown voltage (i c =1madc) 18 bv ceo - *t j = 25 o c (unless otherwise specified) case outline: to-72 pin 1: emitter pin 2: base pin 3: collector pin 4: case mhz preliminary
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